Comparative Study of Temperature Sensitive Electrical Parameters for Junction Temperature Monitoring in SiC MOSFET and Si IGBT

Abstract

Online monitoring of power device junction temperature is a viable technique to ensure reliable operation of mission critical power electronic converters. This paper presents a comprehensive study of major temperature sensitive electrical parameters (TSEPs) of SiC MOSFETs and compares them to those of Si IGBTs. These static and dynamic parameters include on-state resistance R on , threshold voltage V TH , turn-off delay time t d−off , miller plateau voltage V GP , and turn-on di/dt. The experimental results conclude that R on and turn-on di/dt are more suitable TSEPs for SiC MOSFET while V TH , t d−off , and V GP are more suitable for Si IGBT.