Abstract
In this paper a comparative analysis between different kinds of Silicon Carbide (SiC) transistors applied to the Sequential Switching Shunt Regulator (S3R) with active current limitation capability is presented. The S3R is a well-known Direct Energy Transfer photovoltaic power conditioner used in space vehicles.The main novelty discussed in this paper is the use of SiC transistors, JFET cascodes and SiC MOSFETs, instead of Silicon MOSFETs. High-voltage, high-power and high-temperature characteristics of these devices make them ideal for this application.DOI: http://dx.doi.org/10.5755/j01.eie.23.5.19243
Highlights
In the literature, many different options to implement the power conditioning unit (PCU) of a satellite could be found [1]
On one hand there are Direct Energy Transfer (DET) systems, which are characterized by its simplicity, robustness and lower mass
Maximum Power Point Tracking (MPPT) systems have the advantage of maximise the energy drawn by photovoltaic sources, but require DC-DC converters and it has a subsequent impact on the power density ratio
Summary
Many different options to implement the power conditioning unit (PCU) of a satellite could be found [1]. Maximum Power Point Tracking (MPPT) systems have the advantage of maximise the energy drawn by photovoltaic sources, but require DC-DC converters and it has a subsequent impact on the power density ratio In both cases, each group is subdivided into unregulated systems and regulated systems, being the latter, a more complex architecture. Parasitic capacitances values reach few microfarads [5] This fact has a wide importance in the S3R system where the regulation is achieved short-circuiting some solar array sections through a shunt branch. This is implemented with power transistors and, when panel is short-circuited, they should discharge this capacity, achieving quite high currents. The shunt transistor will work in its lineal region during the discharge, restricting the current
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