Abstract
Two techniques often used in semiconductor industry, namely, low-pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD), were used to deposit silicon-rich oxide layers. Thermal treatments have been performed to promote Si precipitation. The composition of the layers was monitored by X-ray photoelectron spectroscopy showing significant nitrogen content ( ∼ 8 % ) only in PECVD layers. The formation of Si nanoclusters has been evidenced by Raman spectroscopy and photoluminescence measurements. LPCVD layers revealed a precipitation even in the as deposited films, and a phase separation was achieved at 1100 ∘ C , while the clusters remain amorphous for PECVD grown films. Electron images of the films revealed an average size of the Si clusters of 3–5 nm with a density around 5 × 10 17 cm - 3 . The optimum temperature for a strong near-infrared emission from Si precipitates was found around 1100 ∘ C for LPCVD and 1250 ∘ C for PECVD layers.
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