Abstract
A comparative study of switching characteristics of silicon (Si) insulated-gate bipolar transistor (IGBT) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with the similar power rating is presented. The 1.2 kW/30 kHz domestic induction cooker prototype based on the optimal operation with zero-voltage and zero-derivative switching (ZVDS) Class-E inverter is built for evaluating the 1.2-kV/41-A Si IGBT and the 1.2-kV/ 40-A SiC MOSFET performance. The experimental results show that the Si IGBT has lower switching speed and much higher loss when compared with the SiC MOSFET. Moreover, the switching loss of the Si IGBT will increase significantly for high temperature operation, while the switching loss of the SiC MOSFET is almost constant for different of operation temperature. The experimental results show that the system efficiency can be increased from 96.5% to 98.7% when using the SiC MOSFET. Hence, making them suitable for lower losses and higher temperature applications.
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