Abstract
In order to optimize the series array performance of Y Ba2Cu3O7−x (YBCO) grain boundary shunted junctions, a method to determine and control the junction resistance Rs and Au/YBCO contact resistivity ρ c has been developed. 200 nm thick c-oriented YBCO films were grown by intermittent thermal coevaporation on bicrystal yttria-stabilized zirconia substrates. A gold contact overlayer of thickness dn was deposited in situ. Normal junction resistances have been measured as a function of dn and shunt width w. It was shown that, in accordance with theoretical estimates, the junction shunt resistance is essentially controlled by the c-axis Au/YBCO interface specific resistance and scales as\(R_s = \frac{1}{w}\sqrt {\frac{{\rho _c \rho _n }}{{d_n }}} \). The product ρ c ρ n ≃ 3.10−14 Ω2cm3 was estimated from the experimental data, leading to ρ c ≈ 10−8 Ωcm2 for typical values of ρ n for gold thin films.
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