Abstract
This paper presents a comparative analysis of the performances of Silicon (Si) and Silicon Carbide (SiC) power semiconductor devices for high power applications such as renewable energy generations and motor drives. A detailed investigation of the merits of power semiconductor devices such as conduction losses, switching losses, and efficiency is performed. Power devices with similar or very close specifications such as similar blocking voltage rating, similar continuous current rating and similar on-state resistances are selected for the investigation. The semiconductor device conduction and switching losses and overall system efficiency are estimated for a wide range of operating conditions such as switching frequency and operating temperature. A lesser-explored approach, Saber-Simulink cosimulation, is used to estimate the performances of the power devices for different operating conditions. A physics-based compact power device model is used for the investigation. Due to its compatibility, Saber is used to model the power stage and Simulink is used to model the control algorithm for the inverter because of its flexibility for controls implementation.
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