Abstract
We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved IDS, SS, and Gm of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with different passivation time are equivalent to the NC devices with different MOS capacitances. Meanwhile, the electrical properties of NCFET with 40 min passivation are superior to that of NCFET with 60 min passivation owing to the good matching between CFE and CMOS. Although SS of sub-60 mV/decade is not achieved, the non-hysteretic transfer characteristics beneficial to the logic applications are obtained.
Highlights
With the scaling down of transistor, the integration level of integrated circuit (IC) is continuous growing
Many efforts have been devoted to the research and the development of devices with novel transport and switching mechanisms to beat the Boltzmann limit, including negative capacitance field-effect transistor (NCEFT) [3, 4], resistive gate field-effect transistors (FETs) [5], nanoelectro mechanical FET (NEMFET) [6, 7], impact ionization metal-oxide-semiconductor (I-metal oxide semiconductor (MOS)) [8, 9], and tunneling FET [10, 11]
The hysteresis-free transfer characteristics are obtained for the Negative capacitance field-effect transistor (NCFET) with 40 and 60 min passivation
Summary
With the scaling down of transistor, the integration level of integrated circuit (IC) is continuous growing. A theoretical study has shown that the undesired hysteresis occurs due to unmatched ferroelectric capacitance CFE to underlying MOS capacitance CMOS in NCFET [19]. The effect of matching between CFE and CMOS on the electrical characteristics of NCFETs is still a concern in the experiments. The electrical characteristics of NC Ge FETs with different MOS capacitances are studied based on the different matching between CFE and CMOS. SS less than 60 mV/decade does not appear, the hysteresis-free transfer characteristics and better electrical properties are obtained. Apparent peaks of CFE versus VFE curves demonstrate NC effect of HZO based NCFETs. The better matching of CFE and CMOS contributes to steeper SS and higher on current, which is beneficial to the logic applications
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