Abstract
Minority electron properties in p+-GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+-GaAs doped to ∼1019 cm−3 with Be- and C-dopants. Zero-field time-of-flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be- and C-doped material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
