Abstract
C/C-SiC-HfC composites were prepared using reactive melt infiltration (RMI) under a vacuum (noted as HS-V) and normal pressure (noted as HS-NP), separately. The distribution of the introduced SiC and HfC ceramics can be regulated by adjusting the RMI pressure. Different pressures of the environment at the high temperature stage led to the difference in volatilization of Si in the melt and the ratios of C and HfSi2 in unit volume on the surface of the sample, resulting in the different composition of the sample surface. A HfSi2-HfC-SiC mixed layer was formed on the surface of HS-NP, while HfC coating was formed on the surface of HS-V. HS-NP possessed better ablation performance than HS-V. After ablation for 120 s, its mass ablation rate decreased by 87.81%. The presence of HfSi2 improved the densification of HfO2 film, which made the ablation resistance of HS-NP better than HS-V. This work provides a guide for choosing an idea pressure condition during RMI to obtain C/C-SiC-HfC composites with high ablation resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.