Abstract
A comparison of structural, optical and electronic properties between undoped hydrogenated microcrystalline silicon films deposited by hot-wire chemical vapor deposition using either a high vacuum reactor or an ultra-high vacuum reactor has been made. The growth process has been assessed by changing the dilution ratio of silane in hydrogen and the process gas pressure, under the high pressure range (∼10 −1 mbar) and the low pressure range (∼10 −3 mbar) respectively. Structural properties (crystalline, amorphous and void fractions) of the films are analyzed through ultra-violet (UV)–visible ellipsometry and Raman spectroscopy data whereas electronic properties (majority carrier mobility-lifetime product and activation energy of the conductivity) are analyzed through dark conductivity and photoconductivity. All these results have been interpreted in terms of the flux of atomic hydrogen arriving on the growing surface, compared with that of radicals. This flux ratio is very sensitive to the gas pressure. This study gives better insight into the hot-wire deposition mechanisms.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.