Abstract

Metastable light-induced photoconductivity decay was studied on a timescale from 10 s to more than 4000 h for variously prepared hydrogenated amorphous silicon films. Differences in the onset of photoconductivity decay are attributed mainly to differences in the density of states at the Fermi level in the initial state. Stabilized photoconductivity observed after extended illumination is found to depend not only on the density of light-induced defects but also on the position of the Fermi level.

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