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Abstract
The results of hydrogen evolution from amorphous hydrogenated silicon (a-Si:H) films prepared by glow discharge decomposition of SiH 4, sputtering in an ArH 2 plasma and vacuum evaporation with the addition of hydrogen are compared. Two evolution processes can be distinguished: a low temperature evolution due to the release of molecular hydrogen through voids or cracks and an evolution at high temperatures due to effusion from compact a-Si:H material, which is dominated by diffusion of atomic hydrogen. The low temperature evolution for sputtered and evaporated films is related to molecular hydrogen that is adsorbed dissociatively on internal surfaces during film growth and for glow discharge samples to the presence of polysilane-like intergrain material. Differences in the position of the high temperature evolution peaks are attributed to a higher degree of disorder in evaporated and sputtered films compared with that in glow discharge samples.
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