Abstract
A comparative study of wet etchants for both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) grown n- and p-type samples was performed using capacitance–voltage (C–V) characteristics and surface recombination velocity (SRV) extracted from photoconductive decay (PCD) measurements. Different wet etchants were divided in two categories, (i) where bromine is a direct reagent in the etching solution and (ii) where bromine is a byproduct after reaction among different reagents. Negative shift of the flat-band voltages were observed for both n- and p-type samples treated with second category of etchants. A decrease in minority carrier lifetimes and an increase in the surface recombination velocities were also observed for the n-type samples treated with second category of etchants.
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