Abstract
The purpose of this brief is to investigate the degradation of 1/f noise levels that is caused by Fowler-Nordheim (FN) tunneling stress for both the silicon nanowire transistor (SNWT) and the FinFET. The oxide traps that are generated under constant-voltage FN stress are extracted from the 1/f noise characteristics. Under the same FN stress voltage and time, the amount of oxide traps that is generated in the cylindrical-channel SNWT is much larger than that generated in the planar-channel FinFET, which is due to the increased electric field at the SiO2/Si interface that is caused by the cylindrical architecture of the SNWT.
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