Comparative study of hard CMOS damage irradiated by CW laser and single-pulse ns laser

Abstract

In order to study the phenomenon and the mechanism of the hard damaged regional expansion of complementary metal oxide semiconductor(CMOS), a 1080 nm continuous wave(CW) laser and a 1064 nm single-pulse ns laser are used to irradiated the front illuminated CMOS, which has a three-stage of hard damage: point damage, half black line damage and black lines cross damage. When irradiated by CW laser, the thermal effects lead to damage. When the duration time is shorter than the thermal balance time, longer duration time leads to lower threshold and the threshold would be a constant when the duration time is longer than the thermal balance time. Observing the micro-structure of damaged CMOS detector and combining the electric structure and working principle of CMOS, we conclude that the half black line damage and black lines cross damage of CMOS irradiated by CW laser are signal short leading by fused metal lines of different layer. But the mechanism of single-pulse laser is different which is mainly induced by thermal effects and plasma impulse wave.