Comparative study of gallium nitride and silicon carbide MOSFETs as power switching applications under cryogenic conditions

Abstract

The operation of power switching systems based on Gallium Nitride (GaN) and Silicon Carbide (SiC) metal oxide field effect transistors (MOSFETs) were presented under the influence of very low temperatures ranging from (−173 °C) up-to (+25 °C). In this concern, the static –and dynamic –characteristic curves were plotted at different temperature levels within the investigated range, where it is clear that, all of the threshold voltage, ON-state resistance, input, output and reverse transfer-capacitances, figure of merit and total gate charge were shown to be decreased with temperature decreasing. Besides, the work was extended to investigate the performance of both devices whenever operates as a switch, where plotting their transient times, showed that, nearly all times of the investigated MOSFET switches are a direct function of temperature.