Abstract
In our study, we theoretically introduced a ZnO-based Multi Quantum Wells (MQWs) as a pressure and temperature sensor. We investigated the detection of these quantities by observing slight variations in the position of the localized states with changes in the measurements. We worked on semiconductors with wide bandgaps and high electron motility to enable rapid electron movement. Our theoretical study is based on the Green function formalism, note that all our numerical calculations are performed using the FORTRAN compiler. Calculations show that the positions of the defects (jdef1) and (jdef2) do not have a considerable effect on the localized electronic states during symmetrical permutation. However, the effect of hydrostatic pressure on the structural parameters is remarkable. We have optimized the structure to obtain the highest sensitivity as a function of the inserted defect. By introducing a geometrical defect, we have increased the sensitivity to temperature and pressure variations, enabling this structure to be used as a sensor in various fields such as health, industry, home automation, and environmental control.
Published Version
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