Abstract
Despite the renewed interest in rare earth-doped chalcogenide glasses lying mainly in mid-infrared applications, a few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-infrared. This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er3+ photoluminescence. The study of Er3+ 4I13/2 level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the RE-doped thin film properties. The surface roughness is very low for both deposition methods, ensuring reasonable propagation optical losses. The effects of annealing on the sulfide films spectroscopy and lifetimes were assessed. PLD appears consistent composition-wise, and largely independent of the deposition conditions, but radiofrequency magnetron sputtering seems to be more versatile, as one may tailor the film properties through deposition parameters manipulation. The luminescence via rare earth-doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunications or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.
Highlights
In recent times, the range of electromagnetic spectrum covering mid-wavelength infrared (MWIR) and long-wave infrared (LWIR), has become an appealing option for cutting-edge chemical sensing applications, due to its encompassing the excitation of fundamental vibrational transitions for many molecules, in gaseous or in liquid phase[1]
We show an extensive study of erbium-doped Ga-Ge-Sb-S thin films fabricated by pulsed laser deposition (PLD) and RF sputtering, comparing the two physical vapor deposition (PVD) methods and the effects that the deposition conditions have on their composition, morphology, topography and optical properties
In order to better control the manufacturing process of PLD and RF sputtered thin films of erbium-doped sulfides, as well as to better know the specific role and impact played by the two deposition techniques on the final results and characteristics, two sets of samples deposited by PLD and RF sputtering, were prepared and studied by recording their chemical composition, morphology, local structure and spectroscopy
Summary
The range of electromagnetic spectrum covering mid-wavelength infrared (MWIR) and long-wave infrared (LWIR), has become an appealing option for cutting-edge chemical sensing applications, due to its encompassing the excitation of fundamental vibrational transitions for many molecules, in gaseous or in liquid phase[1]. The main light source operating in the infrared is the quantum cascade laser, which provides a wide emission wavelength range beyond the near-IR2,3 and represents an important stepping stone in the advancements on this topic Another crucial advancement is the miniaturization of sensors, which has been achieved by developing integrated optical components, allowing for compact and performant devices, and which is still a subject of research in order to optimize the means, the scale and the costs of the production. Thanks to the knowledge of these different chemical, optical or spectroscopic characteristics put into perspective in relation to the deposition conditions, the aim of this study is to obtain a detailed understanding of the advantages of one PVD method over the other, and the possibilities of adapting the properties of the chalcogenide thin films by adjusting the set manufacturing parameters
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