Comparative study of easily integrable photodetectors

Abstract

Three different 800-nm photodetectors were fabricated using an ion-implanted GaAs MESFET technology. No modifications to the MESFET process are necessary, making these detectors among the most easily integrable reported. The detectors are a photoconductor with an ion-implanted active region and a high photocurrent gain [27], a fast photodiode (FWHM < 53 ps), and a zero-bias photodiode, Accurate comparisons of reported detectors are sometimes difficult because results are influenced by differences in the processing, material, device dimensions, active area, and testing. These factors are identical for the three detectors reported, making a fair comparison among detector types possible.