Abstract
The simulated device structures of ITO/ZnO/Perovskite absorber layers (PAL)/Spiro-OMeTAD/Au with distinct absorbers were modeled and investigated using solar cell capacitance simulator (SCAPS-1D) simulating software (version 3.8). The primary objective is to enhance the thermal stability of the solar device. As the absorber thickness and temperature impact PV performance parameters, thus main aim of this work is to determine the optimum thickness of PAL as well as the temperature affectability on the PV performance of the cells. It was also observed that the maximum PV parameters (among the cells under consideration), viz. 29% PCE, are achieved with the formamidinium tin iodide (FASnI3) at the thickness of 600 nm. Similarly, the temperature of 300 K shows a much-improved efficiency offering nearly 29%. Further, the external quantum efficiency (EQE) and J-V also confirm the determent of the more stable, lead-free, FASnI3-based device, which can provide an effective way to develop highly efficient, low-cost solar cell devices.
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