Abstract
A comparison of different current mode sense amplifiers using 0.25 /spl mu/m CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and flash non-volatile memories. Simulation results are given regarding the sensing delay time for different power supply voltages V/sub dd/ and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation, while worst-case and high temperature simulations are included, in order to expose limitations of the sensors in various operating conditions.
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