Comparative Study of Dielectric Thin Films for GaN HEMTs

Abstract

As a typical representative of the third generation of semiconductor materials, attracts wide attention, wide band-gap semiconductor gallium nitride (GaN) has many advantages that silicon materials do not have, now it has been used to fabricate many devices. And as one of the heterojunctions MESFET, GaN HEMTs have many excellent properties, e.g., high electric breakdown field, large saturation velocity, and low ON-resistance (Ron), wide band gap, and high mobility. The material can be employed in several fields as a result of its good qualities. All these amazing properties make it an excellent semiconductor material for communication, radar detection, guidance and other civilian and military fields. Specifically, there are mobile phones, satellite television receivers, voltage converters and radar equipment, power adapter and car charging. However, in the high-power application, the current collapses affected the performance of the devices badly. The article will discuss both high dielectric constant and low dielectric, which are used for reducing the current collapse, and improve the devices performance.