Abstract
In this paper, the diffusivities of copper in 15 nm thick Ru and Ru–C barrier layers are determined experimentally by using sheet resistance and X-ray diffraction measurements with the Cu/barrier/Si samples. By fitting the dependence of diffusivities on temperature, the activation energy for Cu diffusion in Ru–C film is 1.11 eV, which is substantially higher than that in Ru film (0.54 eV). Microstructural analysis by transmission electron microscopy combined with energy-dispersive X-ray suggests that the higher activation energy for Cu diffusion in Ru–C is associated with the stuffing of added carbon atoms on the grain boundaries of the Ru matrix and consequently leading to the superior diffusion barrier performance of the Ru–C film.
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