Abstract
Thin films of Co2MnSi are grown on n-doped Si (100) and SiO2 (100) substrates by RF sputtering. The deposition time to grow the films is varied, once for ten minutes and another for an hour at a particular substrate temperature 600oC and keeping all the other parameters same. The Co2MnSi thin films deposited on Si and SiO2 are crystalline irrespective of the deposition time. The grains were round in the thin films deposited for 10 minutes and these grains are more consistently interconnected in the films deposited for 1 hour. This is supported by the surface roughness data from AFM. The rms roughness is found to be 4.82nm for Si for 10 minutes and 2.50nm for Si for 1 hour deposition that was observed over an area of 3µm2. Copyright © 2017 VBRI Press.
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