Abstract
The chemical nature of semitransparent (∼125 Å) palladium on silicon Schottky-barrier-type devices was determined by complementary AES and ISS techniques. Postdeposition analyses of metal-semiconductor (MS) and metal–thin-insulator–semiconductor (MIS) devices prepared without heat treatment showed that palladium silicide is formed in the MS structures, while the presence of an ultrathin (∼30 Å) purposefully grown semiconductor oxide film inhibits the chemical reaction between Pd and Si in the metal overlayer. Chemical bonding information extracted from the AES data was correlated with barrier-height measurements obtained from capacitance-vs-voltage (C-V) and current-vs-voltage (I-V) electrical characteristics of these devices.
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