Abstract
Using the pseudopotential method and the local density approximation, we present a comparative study of the atomic and electronic structure of a single monolayer deposition of Bi on III-Sb(110)-(1×1) surfaces, where III=Al, Ga or In. In this respect, we find that within the epitaxially continued layer structure, Bi/GaSb(110)(1×1) is somewhat different from the monolayer coverage of Bi and Sb on III-As(110) and III-P(110) substrates. In particular, the tilt of the Bi chain is reversed for Bi/GaSb(110). The trend in the characteristics of Bi chain on III-Sb(110) surfaces is analysed in terms of the relative atomic sizes and electronegativities of the substrate anion and cation.
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