Comparative Study of 2SiC&amp;4Si Hybrid Configuration Schemes in ANPC Inverter

Zhijian Feng,Jiacai Zhuang,Xing Zhang,Shaolin Yu

doi:10.1109/access.2020.2974554

Comparative Study of 2SiC&4Si Hybrid Configuration Schemes in ANPC Inverter

Zhijian Feng, Jiacai Zhuang + Show 2 more

Open Access

https://doi.org/10.1109/access.2020.2974554

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Abstract

Compared with traditional silicon (Si) power devices, silicon carbide (SiC) devices have attracted extensive attention due to their excellent characteristics. In recent years, the manufacturing process of SiC devices has become more mature, but the cost is still high. Therefore, replacing only some of the Si devices with SiC devices in a topology is a better choice to achieve higher system efficiency while considering costs. This paper studies the hybrid configuration schemes consisting of two SiC devices and four Si devices (2SiC&4Si) in ANPC three-level inverter. Two hybrid 2SiC&4Si topologies are proposed. In order to make full use of the low switching loss characteristics of SiC devices in hybrid topologies, specific modulation strategies are applied to concentrate switching losses on SiC devices. Based on the 2SiC&4Si hybrid ANPC topologies, three efficient SiC&Si hybrid configuration schemes are derived. In this paper, the theoretical comparison and experimental verification of the efficiency and loss distribution of the three hybrid schemes are carried out.

Highlights

Three level topologies are widely used in medium and high power class photovoltaic (PV) inverters
This paper studies the 2SiC&4Si hybrid configuration schemes of active neutral point clamped (ANPC) three-level inverter
C. 2SiC&4Si HYBRID CONFIGURATION SCHEMES FOR ANPC TOPOLOGY It can be seen from the above analysis that switching loss is concentrated on T1/T4 or T2/T3 under unit power factor

Summary

Introduction

Three level topologies are widely used in medium and high power class photovoltaic (PV) inverters. When the load current is positive, the high-frequency switching loss is concentrated on T1; the anti-parallel diode D5 has reverse recovery loss. When the load current is negative, the high-frequency switching loss is concentrated on T5; the anti-parallel diode D1 has reverse recovery loss.

Results

Conclusion