Abstract
This paper presents a comparative study of linearization techniques for Complementary Metal Oxide Semiconductor low noise amplifier. The study is performed previously reported three different techniques; modified derivative superposition, post distortion and noise/distortion cancellation. To perform the design, cascade amplifier topology and 0.18μm Complementary Metal Oxide Semiconductor process parameters is used. These performance are studied in the frequency range of 1 GHz to 5 GHz through simulation. Simulations are performed in Applied Wave Research design environments program.The results are compared with each other and previously reported publication in ways of Input third order intercept point, Input second order intercept point, gain, input return loss, noise figure and DC power.
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