Abstract
We present the results of a detailed investigation of hydrogen incorporation and optical absorption in the 0.6-1.3 eV range for two series of hydrogenated amorphous germanium films (a-Ge:H) deposited by reactive sputtering (series A) and by plasma-enhanced chemical vapor deposition from germane (series B). Our results clearly show that the series A samples are characterized by a larger bonded hydrogen concentration (CH), a more rapid gap variation with increasing CH, a smaller refractive index, and a lower density than the series B samples. We also compare in detail the energy distribution of the localized states in the pseudo-gap and the deep-defect states density as deduced from a decomposition of the optical absorption spectra based on a theoretical model for the gap states density in amorphous tetracoordinated semiconductors.PACS No.: 71.90
Published Version
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