Abstract
Doping of metal-oxide thin films provides an effective method to improve the performance of various devices based on them such as solar cells, photodetectors, and gas sensors. Developing high-performance of these devices, the influence of In, Ga, and Sn dopants on structure, optical and electrical characteristics of CuO deserves further study. Herein, undoped and In-, Ga-, and Sn-doped CuO thin films are deposited on glass substrates by the sol-gel method, and the parameters influenced by these dopants are determined systematically. The effect of studied dopants on XRD, SEM, UV-vis, PL, and electrical conductivity measurements are examined, and the results are correlated with each other. Additionally, the electrical transport mechanism of the films is comprehensively investigated. It is determined that the multi-phonon hopping (MPH) conduction mechanism governs the temperature-dependent conductivity of the films. Finally, it is found that the probed dopants significantly impact the properties of CuO thin film.
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