Abstract
In this paper, the stability analysis of silicon carbide nanotube (SiCNT) has been investigated. Nanotubes has many advantages with its very high surface area, exceptional electrical conductivity and resistance to high temperature and external loads. Although nanotubes can be obtained without superfluous effort, it is not facile to achieve experimental analyzes due to demand of laboratory equipment with astronomical cost. To obtain critical buckling loads, both molecular dynamic (MD) method and ANSYS finite element software is used in current paper. LAMMPS (Large-scale Atomic/Molecular Massively Parallel Simulator) is used for calculating critical buckling load. Also, VMD (visual molecular dynamics) is used to visualize atoms in molecular dynamic analysis.
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