Abstract
Nomenclature As = surface area of the substrate base, m 2 d = diameter of the nozzle, m H = height of the channel, m h = heat transfer coefficient,W · m−2 · K−1 k = thermal conductivity,W · m−1 · K−1 lx, ly, lz = length, width, and height of the silicon substrate, respectively, m N = number of observation for calculating mean value n = number of jets P = pumping power, W p, Δp = pressure and pressure drop, respectively, Pa Q = volume flow rate, m · s−1 q = heat flux, W · m−2 Rth = thermal resistance, K · W −1 T, ΔT = temperature and temperature rise, respectively, K ts = thickness of the substrate base, m V = velocity vector, m · s−1 x, y, z = orthogonal coordinate system ρ = density, kg · m−3 σ = standard deviation, K
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