Abstract
The performance of InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-well barriers formed from alternating p- and undoped regions is compared with that of reference devices having similar epilayer structure but with barriers formed from alternating n- and undoped regions. Simulations verify that p-type step-doping in the quantum barriers is more effective in reducing the polarization-induced electric field and lowering the energy barrier for hole transport as well as increasing the barrier height of the conduction band to confine electrons, thereby enhancing the radiative recombination rate compared with n-type step doping in the quantum barriers. This profile also increments hole injection and provides a more uniform carrier distribution across the multiple quantum wells. According to the simulation results, when using the alternating stepwise doping profile in the barrier regions in the proposed structure, the internal quantum efficiency is remarkably improved, offering dual advantages of a homogeneous hole distribution due to the undoped region and a reduced valence-band barrier height due to the p-doping.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
