Abstract
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material with intrinsic properties best suited for high power switching applications. This paper simulates and compares the thermal and electrical performance of AlGaN and Silicon (Si) MOSFETs, modeled in COMSOL Multiphysics. Comparisons between similar AlGaN/GaN and Si power modules are made in terms of heatsink requirements. The temperatures for the same operating voltage are found to be significantly lower for the AlGaN MOSFETs structures, compared to Si. The heatsink size for the AlGaN/GaN is found to be smaller compared to Si for the power modules.
Highlights
Power electronics is an important link between the generation and consumption of electrical energy with multiple transformation stages taking place through power electronic devices
For the the same same power power dissipated, dissipated, the the temperature temperature difference difference is is compared not twice as small compared with the same values, but the temperatures are found not twice as small compared with the same VGS values, but the temperatures temperatures are found found to be be lower lower for for the the AlGaN
Joule heating generated by electric temperature values for the entire module, the Joule heating generated by electric currents currents passing through each of the MOSFET/ High Electron Mobility Transistors (HEMT) switches were obtained from calculations made in PSIM, which acted as the heat sources for each switch in COMSOL
Summary
Power electronics is an important link between the generation and consumption of electrical energy with multiple transformation stages taking place through power electronic devices. WBG materials have properties like higher electrical breakdown voltages and bandgap energies compared to Si, which lead to lower ON resistances. These properties allow for higher operating voltages and temperatures with lower power losses [4,5]. VDMOSFETs have a bigger separation between the Drain and Source terminals compared to LDMOSFETs, which increases the operational voltages of the device without breaking down electrically [16,20]. This paper compares the electrical and thermal performance of AlGaN as a material for a VDMOSFET structure with that of Si using COMSOL Multiphysics for the same operating voltage conditions. Si MOSFET module, in terms of heatsink requirements, for the same operating conditions in 3D simulations in COMSOL
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
