Abstract
In situ mass spectrometric analysis of gaseous species evolved from gold coated GaP, InP, GaAs, InAs during heat treatment is described. The thickness of gold was 50 nm and 15 nm and a linear heating rate of 150°C min−1 was applied. The gold greatly enhanced the decomposition of compound semiconductors. During annealing the Au is saturated with the AIII component, while the BV (volatile) component evaporates. On the evaporation vs temperature curves one or more peaks appear, depending on the thickness of gold layer and the type of compound semiconductor. The thicker the gold layer, the higher the volatile component loss and the higher the temperature of peak arsenic or phosphorus evolution.
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