Abstract
The recent publication of the IEEE Transactions on Electron Devices 'Special Issue on Heterojunction Field-Effect Transistors' (HFETs) (vol. ED-33, May 1986) has described the latest in high-speed transistors. The question arises as to which technique and fabrication technology is currently #1 in the high-speed race. The techniches are presented in tabular form and each is compared and contrasted.
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