Abstract
Power cycling test (PCT) is an effective method to evaluate the SiC MOSFETs' long-term reliability, including lifetime and degradation mechanisms. Some of the aging precursors of PCT have been identified in previous literature. But when multiple failure mechanisms compete with each other, the individual precursors are nullified. Although PCT is mainly used to evaluate the package reliability, there are still unresolved problems due to the gate oxide reliability of SiC MOSFET, the repeated gate stress of the power cycling has different effects on the devices with different gate structures. This paper presents a comprehensive investigation of the aging precursors and failure mechanism of three typical commercial SiC MOSFETs with different gate structures through PCTs under two different conduction modes. Degradation-related essential precursors and possible causes behind them are discussed. The failure mechanisms and correlation with the degradation state of different devices are studied in depth. In addition, the effects of PCT under different conduction modes on failure mechanism and lifetime have been investigated.
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