Abstract

The microjetting processes of single-crystal tin with sinusoidal surface defects under laser loading and plane impact loading are investigated by using molecular dynamics simulations via the second nearest-neighbor modified embedded atom method potential. Simulation results exhibit that the jetting factors for laser loading and plane impact loading first increase with the increment of shock breakout pressure and then reach their own saturation values, in agreement with previous experimental observations. However, the jetting factor under laser loading saturates at relatively lower shock breakout pressure than its counterpart under plane impact loading. Structure analysis via x-ray diffraction and radial distribution function techniques indicates that the laser loading leads to higher melting degree, which further facilitates the ejection process. The spike velocity linearly depends on the shock breakout pressure for both loading methods, but the bubble velocity varies with the loading method. In addition, void nucleation and growth within the sample are observed for laser loading due to the interaction of release waves. The simulation results reveal the underlying mechanisms of ejection process under plane impact loading and laser loading, helping enhance the understanding of microjetting phenomena.

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