Comparative investigation of electronic properties of As-70 at.% Te thin films: Influence of Ga doping and annealing temperature

Abstract

Bulk and thin films (150 nm) of As30Te70-xGax (0 ≤ x at.% ≤ 10) are synthesized under vacuum via the melt-quenching and thermal evaporation techniques, respectively. The crystal structure class and formed crystalline phases during the annealing are tested by X-ray diffraction. The influences of both thermal annealing and Ga doping on the electrical properties such as the electric conductivity of As-Te-Ga are investigated and contrasted with published data. For instance; at room temperature, electrical conductivity is improved from 7.7 × 10−4 to 8.04 × 10−3 Ω−1cm−1 at 3 at.% Ga, however, decreased with beyond increase in Ga content. The conductivity of the annealed samples rises as the annealing temperature increases. Furthermore, other basics parameters of the stoichiometric thermally evaporated thin film such as average coordination number, number of ions per electrons, the heat of atomization, cohesive energy, the valence electron, and deviation of stoichiometry are found exactly proportional to the Ga content.