Abstract
In this study we report the comparative study of CZTS/CdS solar cell device with two different back contacts. The device configuration of ITO/CZTS/CdS and Ni/CZTS/CdS are fabricated and characterized. By varying the back-contact work function of device the performance of the solar cell device is enhanced. A high work function back contact could effectively make a near-ohmic contact with high bandgap p-type semiconductor. We here experimentally showed the improvement in device efficiency by employing high work function back contact for CZTS device. The comparative devices exhibited performance, with open-circuit voltage of 0.16 V and 0.36 V and conversion efficiency of 0.74% and 2.33% for ITO/CZTS/CdS and Ni/CZTS/CdS device respectively. We numerically replicated this enhancement using work-function as parameters in simulations.
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