Abstract
Thin amorphous nitrogen-rich CN x films (N/(C+N) ≥ 0.5) have been prepared by two inductively coupled plasma chemical vapour deposition (ICP-CVD) techniques: using transport reactions from a solid carbon source and from CCl 4 /NH 3 /Ar and CCl 4 /N 2 /H 2 /Ar gas mixtures. Optical emission spectroscopy (OES) and quadrupole mass spectrometry were used to derive information about the plasma properties. The composition of the films was investigated by Auger electron spectroscopy (AES), wavelength dispersive X-ray (WDX) and elastic recoil detection (ERD) analyses, and the chemical bonding structure by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. In addition, several application relevant properties (mechanical, optical, electrical) of the nitrogen-rich CN x films were studied. The results of both deposition methods were compared and discussed on the base of the specificities of the processes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.