Abstract
The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.
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