Comparative Analysis of Vertical Nanotube Field Effect Transistor (NTFET) Based on Channel Materials for Low Power Applications

Abstract

3D Vertical Nanotube Field Effect Transistors (NTFETs) with various channel materials are analysed for 5nm gate length (LG) in this research work. The DC and RF studies are performed on NTFET devices with Silicon, Gallium Nitride (GaN), and SiliconGermanium (SiGe) as channel materials. The impact of variation of channel length, channel thickness, and temperature analysis on these devices have been studied. The ION/IOFF ratio of Si-NTFET, GaN-NTFET and SiGe-NTFET are found to be 2.7×108^ , 1.08×10^9 , 1.69×10^8 respectively. GaN channel NTFET exhibits the lowest subthreshold swing (SS) of 33.1mV/dec with the highest cut-off frequency of 190 GHz. From the analysis, it is found that NTFET with GaN channel device outperforms the other two devices.