Abstract
The work is devoted to the comparative analysis of the scintillation and thermoluminescent properties of the undoped and Ce-doped A2SiO5 (A=Lu, Y) orthosilicates, prepared in single crystal form by the Czochralski method and in the form of single crystalline film using the liquid phase epitaxy method. We have found that differences in the methods of material preparation resulted in the significant differences in the scintillation and thermoluminescent properties of undoped and Ce doped YSO and LSO crystals and films. Such differences are caused by the presence or absence of main host defects (first of all, oxygen vacancies and flux related impurities) as emission and trapping centers in YSO and LSO crystals and films.
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