Abstract
This paper presents the impact of the employed CMOS nanometer technologies (28 nm and 40 nm) on the readout front-end electronics parameters with the emphasis on the count-rate capability and noise performance. The fast signal processing readout front-end electronics is analyzed by providing mathematical formulas with the highlight on technology-related parameters. The front-end electronics input transistor parameters are also compared among considered technologies. Finally, the complete channel, which analog core based on the charge sensitive amplifier, dedicated for pixel detector readout for a given set of requirements is designed and verified in terms of count-rate performance.
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