Abstract
Heterostructures with embedded layers of single InAs and In0.8Ga0.2 As quantum dots (QDs) in a GaAs matrix have been obtained by metalorganic vapor-phase epitaxy. The photoluminescence spectra of these QDs have been measured in a wide temperature range and the analysis of the photoluminescence peaks behavior has been carried out. As a result, it have been found that the In0.8Ga0.2 As QDs has better size uniformity and contains a smaller number of defective islands in comparison with InAs QDs.
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