Comparative analysis of silicon nano tube FET for switching applications using high K and work function modulation

Abstract

In this paper we studied the impact of variation of dielectric constant and alternation of gate work function on silicon nanotube FET for low power and high speed switching applications. The silicon nano tubular structure offers better immunity towards short channel effects. Due to the gate engineered structure high K value structures possess high value of electron velocity. In this paper we have considered a silicon dioxide (SiO2), silicon nitride (Si3N4), hafnium oxide (HfO2), hafnium silicate (HfSiO4), tin oxide (SnO2) and titanium oxide (TO2) as a gate dielectric. Further by tuning the gate work function of the device we can able to achieve multiple threshold voltages and optimise the performance of the device. In this paper we discuss the impact of work function variation on ON-current, OFF-current and threshold voltage. From the analysis it has been found that HfO2 in SINTFET will be a superior alternative for future tubular FET devices and by tuning the gate work function nearby to 4.8 eV the silicon nano tube shows optimised better performance among all other values.