Abstract
The phenomena of platinum (Pt) atoms diffused thermally into n-type GaAs and GaN compound semiconductors have been unveiled. Although the diffusion of Pt into silicon as a carrier lifetime reducer and leakage current minimizer has already been detailed, Pt diffusion into III-V semiconductor has remained unknown. In this study, Pt was surface coated and thermally diffused into (driven-in) GaAs and GaN samples under the temperature range of 500–900°C. The corresponding diffusion constants and diffusion energies were then determined. Different luminescence spectra were observed and analyzed. Among diffused samples, Pt was found to be a shallow donor in GaN semiconductor, but alternatively found as a deep acceptor for Pt-diffused GaAs samples.
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