Abstract
This work deals with the investigation of photo-and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands, embedded in a p–n junction. The photoluminescence and electroluminescence signals related to the islands have been observed up to room temperature. The decrease of activation energy of the photoluminescence signal temperature quenching with the increase of annealing temperature is associated with the decrease of Ge content in the islands during annealing which results in shallowing the potential well for holes in the islands. A sufficient enhancement of the temperature stability of the electroluminescence signal from the islands was observed with the increase of a pumping current.
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