Abstract
Bidirectional DC-DC converters are an essential part of modern power systems, such as electric vehicles and renewable energy. The paper presents a comparative analysis of bidirectional DC-DC converters suitable for high power density application without galvanic isolation. It is based on the comprehensive comparative analysis of conduction losses, voltage stress on semiconductors and passive component size. Continuous conduction mode of three widely used bidirectional topologies (cascaded, two-phase interleaved with and without charge-pump) are analysed. Selected analytically calculated evaluation criteria are compared for a wide range of the output voltage level. The best solution is selected for experimental realization based on GaN transistors. DOI: http://dx.doi.org/10.5755/j01.eie.24.6.22287
Highlights
Recent years have seen a drastic increase in the use of Renewable Energy Sources (RESs) and all types of Electric Vehicles (EVs)
This paper provides a comparative analysis of the proposed bidirectional topologies with criteria related to passive volume, voltage stress on semiconductors and conduction losses, to choose a better structure for lowmedium power portable applications
The comparative analysis showed that the characteristics of conduction losses, the volume of inductive components and the capacitor typical of a cascaded converter are worse than those of other topologies analysed in the paper
Summary
Recent years have seen a drastic increase in the use of Renewable Energy Sources (RESs) and all types of Electric Vehicles (EVs). In those topologies, hard switching control limits their efficiency. A solution to this problem can be the use of transistor hetero structures as AlGaN/GaN-based advanced materials Unique properties of these semiconductors (wide band gap, high values of the charge carrier mobility and saturation velocity, high coefficient of thermal conductivity, etc.) have led to the emergence of devices that have record values of power, voltage and current, as well as the operating frequency (1 MHz–2 MHz) [17]–[20]. This paper provides a comparative analysis of the proposed bidirectional topologies with criteria related to passive volume, voltage stress on semiconductors and conduction losses, to choose a better structure for lowmedium power portable applications.
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